Name: INFINEON IPB60R099CP
Brand: INFINEON
Availability: InStock

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书，点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚	符号	名称
5	V
6	V
7	V
8	V

数据来源：原厂规格书引脚图

关键参数速览

正向电压 VF: 1.2 V
正向电流 IF: 18

产品特点 Features

V @ T 650 V
DS j,max
Worldwide best R in TO263 ds,on R 0.099 Ω
DS(on),max
Ultra low gate charge
Q 60 nC g,typ
Extreme dv/dt rated
High peak current capability
IPB60R099CP
Parameter Symbol Conditions Values Unit min. typ. max.
Dynamic characteristics
Input capacitance C - 2800 - pF iss V =0 V, V =100 V,
GS DS f =1 MHz
Output capacitance C - 130 - oss
Effective output capacitance, energy
C - 130 - related6) o(er)

绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）

超过下表数值可能造成器件永久损坏，设计时请留余量。

参数	符号	条件	值	单位
Continuous drain current	I	T =25 °C T =100 °C	31 19	A
Pulsed drain current2)	I	T =25 °C	93
Avalanche energy, single	pulse E	I =11 A, V =50 V	800	mJ
Avalanche energy, repetitive	t 2),3) E	I =11 A, V =50 V	1.2
Avalanche current, repetitive	t 2),3) I		11	A
MOSFET dv /dt ruggedness	dv /dt	V =0...480 V	50	V/ns
Gate source voltage	V	static	±20	V
		AC (f >1 Hz)	±30
Power dissipation	P	T =25 °C	255	W IPB60R099CP
Continuous diode forward	current I	T =25 °C	18	A
Diode pulse current2)	I		93
Thermal resistance,	junction - case R		- -	0.5 K/W
	R	on PCB, minimal	- -	62
Thermal resistance,	junction -	footprint
ambient		SMD version, device
		on PCB, 6 cm2 cooling area5)	- 35	-
	T	reflow MSL 1	- -	260 °C
reflowsoldering	sold			IPB60R099CP
Input capacitance	C		- 2800	- pF
	iss	V =0 V, V =100 V, f =1 MHz
Output capacitance	C		- 130	-
Effective output capacitance,	energy
	C		- 130	-
related6)	o(er)
		V =0 V, V =0 V to 480 V
Effective output capacitance,	time
	C		- 340	-
related7)	o(tr)
Turn-on delay time	t	V =400 V,	- 10	- ns
Rise time	t	DD	- 5	-
		V =10 V, I =18 A,
Turn-off delay time	t d(off)	R =3.3 Ω	- 60	-
Fall time	t		- 5	-
Gate to source charge	Q		- 14	- nC
Gate to drain charge	Q		- 20	-
	gd	V =400 V, I =18 A, V =0 to 10 V
Gate charge total	Q	GS	- 60	80
Gate plateau voltage	V		- 5.0	- V
		V =0 V, I =18 A,
Diode forward voltage	V SD	GS F T =25 °C	- 0.9	1.2 V
		V =400 V, I =I ,
	rr	di /dt =100 A/µs

数据来源：原厂规格书

电气特性 Electrical Characteristics（TA = 25°C）

参数	符号	条件	值	单位
Drain-source breakdown	voltage V	V =0 V, I =250 µA	600 -	- V
Gate threshold voltage	V	V =V , I =1.2 mA	2.5 3	3.5
		V =600 V, V =0 V,
Zero gate voltage drain	current I DSS	DS GS T =25 °C	- -	5 µA
		V =600 V, V =0 V, T =150 °C	- 50	-
Gate-source leakage	current I	V =20 V, V =0 V	- -	100 nA
		V =10 V, I =18 A,
Drain-source on-state	resistance R	GS D	- 0.09	0.099 Ω
	DS(on)	T =25 °C
		V =10 V, I =18 A, T =150 °C	- 0.24	-
Gate resistance	R	f =1 MHz, open drain	- 1.3	- Ω IPB60R099CP
Input capacitance	C		- 2800	- pF
	iss	V =0 V, V =100 V, f =1 MHz
Output capacitance	C		- 130	-
Effective output capacitance,	energy
	C		- 130	-
related6)	o(er)
		V =0 V, V =0 V to 480 V
Effective output capacitance,	time
	C		- 340	-
related7)	o(tr)
Turn-on delay time	t	V =400 V,	- 10	- ns
Rise time	t	DD	- 5	-
		V =10 V, I =18 A,
Turn-off delay time	t d(off)	R =3.3 Ω	- 60	-
Fall time	t		- 5	-
Gate to source charge	Q		- 14	- nC
Gate to drain charge	Q		- 20	-
	gd	V =400 V, I =18 A, V =0 to 10 V
Gate charge total	Q	GS	- 60	80
Gate plateau voltage	V		- 5.0	- V
		V =0 V, I =18 A,
Diode forward voltage	V SD	GS F T =25 °C	- 0.9	1.2 V
		V =400 V, I =I ,
	rr	di /dt =100 A/µs

应用领域 Applications

Pb-free lead plating; RoHS compliantCoolMOS CP is specially designed for:Type Package Ordering Code MarkingIPB60R099CP PG-TO263 SP000088490 6R099IPB60R099CPDynamic characteristicsGS DS f =1 MHzOutput capacitance C - 130 - ossEffective output capacitance, energyC - 130 - related6) o(er)V =0 V, V =0 VGS DS to 480 V

资料下载

📄 IPB60R099CP 规格书 PDF

规格书为原厂公开资料，点击在新窗口打开下载。

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IPB60R099CP MOSFET 场效应管