产品实拍图
本页为博科信现货实拍（器件丝印 见规格书）。图片已加防盗水印，需要最新批次照片或未加水印原图请联系销售；点击图片可放大。
产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.3
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 列1 | 列2 |
|---|---|
| 100 | 100 |
| TOP 15V | TOP 15V |
| BOTTOM4.5V | BOTTOM4.5V |
| ecruoS-ot-niarD | ecruoS-ot-niarD |
| 20µs PULSE WIDTH | 20µs PULSE WIDTH |
| TJ = 25°C | TJ = 175°C |
| V , Drain-to-Source Voltage (V) | V , Drain-to-Source Voltage (V) |
| ΩkΩµΩΩkΩµΩΩ | ΩkΩµΩΩkΩµΩΩ |
| tnerruC | T J = 175 ° C |
| ecruoS-ot-niarD | ecruoS-ot-niarD |
| T J = 25 ° C I | 1.5 0.5 |
| V GS , Gate-to-Source Voltage (V) | T J , Junction Temperature ( ° C) |
| ΩkΩµΩΩkΩµΩkΩΩ | ΩkΩµΩΩΩ |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 最小 | 典型 | 最大 | 单位 | 条件 |
|---|---|---|---|---|---|
| V Drain-to-Source Breakdown | Voltage 200 | ––– | ––– | V V = | 0V, I = 250µA |
| (BR)DSS | GS | D | |||
| R DS(on) Static Drain-to-Source On-Resistance | ––– | ––– | 0.15 | Ω V GS = | 10V, I D = 11AkΩµ |
| V Gate Threshold Voltage | 2.0 | ––– | 4.0 | V V = V | , I = 250µA |
| GS(th) | DS | GS D | |||
| g Forward Transconductance | 6.8 | ––– | ––– | S V = | 50V, I = 11A µ |
| fs | DS | D | |||
| ––– | ––– | 25 | V = | 200V, V = 0V | |
| I Drain-to-Source Leakage Current | µA DS | GS | |||
| ––– | ––– | 250 | V = | 160V, V = 0V, T = 150°C | |
| Gate-to-Source Forward Leakage | ––– | ––– | 100 | V = | 20V |
| Q Total Gate Charge | ––– | ––– | 67 | I = 11A | |
| Q Gate-to-Source Charge | ––– | ––– | 11 | nC V = | 160V |
| t Turn-On Delay Time | ––– | 10 | ––– | V = | 100V |
| t Rise Time | ––– | 19 | ––– | I = 11A | |
| t Turn-Off Delay Time | ––– | 23 | ––– | R = | 2.5Ω |
| t Fall Time | ––– | 5.5 | ––– | R = | 9.0Ω, See Fig. 10 µ |
| Between | lead, D | ||||
| L Internal Drain Inductance | ––– | kΩµ | ––– | 6mm | (0.25in.) |
| from | package G | ||||
| L Internal Source Inductance | ––– | µ | ––– | ||
| S | and | center of die contact | |||
| C Input Capacitance | ––– | 1160 | ––– | V = | 0V |
| C Output Capacitance | ––– | 185 | ––– | V = | 25V |
| I Continuous Source Current | MOSFET | symbol D | |||
| ––– | ––– | 18 | |||
| (Body Diode) | showing Ω | the | |||
| Ω | ––– | ––– | 72 | ||
| (Body Diode) | p-n | junction diode. | |||
| V Diode Forward Voltage | ––– | ––– | 1.3 | V T = | 25°C, I = 11A, V = 0V |
| SD | J | S GS | |||
| rr | J | F | |||
| R Junction-to-Case | ––– | 1.0 | |||
| R Case-to-Sink, Flat, Greased | Surface | 0.50 | ––– °C/W | ||
| R Junction-to-Ambient | ––– | 62 | |||
| R Junction-to-Ambient (PCB | mount) | ––– | 40 |