产品应用与封装尺寸


图纸取自原厂规格书,点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.4
- 反向电压 VR
- 5 000
- 电流传输比 CTR
- 400
- 正向电流 IF
- 1.4
- 集电极-发射极电压 VCEO
- 80
- 隔离电压 VISO
- 1011
- 电源电压 VCC
- 3
- 工作温度 TA
- 109
产品特点 Features
- PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1e
- PHOTOCOUPLER CONSTRUCTION
- Parameter Unit (mm)
- Air Distance (MIN.) 7
- Creepage Distance (MIN.) 7
- Isolation Distance (MIN.) 0.4
- MARKING EXAMPLE
- No. 1 pin
- Mark R Company Initial
- 2561 Type Number
- ML831 Assembly Lot
- M L 8 31
- Week Assembled
- Year Assembled
- (Last 1 Digit)
- In-house Code
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Forward Current (DC) | I | 80 | mA |
| Power Dissipation Derating | P /C | 1.5 | mW/C |
| Power Dissipation | P | 150 | mW |
| Peak Forward Current*1 | I | 1 | A |
| Transistor Collector to Emitter Voltage | V CEO | 80 | V |
| Emitter to Collector Voltage | V | 7 | V |
| Collector Current | I | 50 | mA |
| Power Dissipation Derating | P /C | 1.5 | mW/C |
| Power Dissipation | P | 150 | mW |
| Isolation Voltage*2 | BV | 5 000 | Vr.m.s. |
| Operating Ambient Temperature | T | –55 to +100 | C |
| Storage Temperature | T | –55 to +150 | C |
| Package temperature | Tsi | 175 | C |
| Current (input current I , Psi = 0) | Isi | 400 | mA |
| Power (output or total power dissipation) | Psi | 700 | mW |
| V IO = 500 V dc at T A = Tsi | Ris MIN. | 109 | |
数据来源:原厂规格书
安全与绝缘额定值(DIN EN/IEC 60747−5−5)
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Test voltage (partial discharge test, procedure a for type | test and U pr | 1 424 | V peak |
| U = 1.6 U , P 5 pC | |||
| Test voltage (partial discharge test, procedure b for all | devices) U pr | 1 669 | V peak |
| U = 1.875 U , P 5 pC | |||
| Highest permissible overvoltage | U | 8 000 | V |
| Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE | 0110-1) | 2 | |
| Comparative tracking index (IEC 60112/DIN EN 60112 (VDE | 0303-11)) CTI | 175 | |
| Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) | III a | ||
| Storage temperature range | T | –55 to +150 | C |
| Operating temperature range | T | –55 to +100 | C |
| V IO = 500 V dc at T A = 25C | Ris MIN. | 1012 | |
| V IO = 500 V dc at T A MAX. at least 100C | Ris MIN. | 1011 | |
电气特性 Electrical Characteristics(TA = 25°C)
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | VF IF = 10 | mA | 1.17 | 1.4 | V | |
| Terminal Capacitance | Ct V = 0 | V, f = 1.0 MHz | 50 | pF | ||
| Transistor Collector to Emitter | ICEO VCE = | 80 V, IF = 0 mA | 100 | nA | ||
| Coupled Current Transfer | Ratio CTR IF = 5 | mA, VCE = 5 V | 80 | 200 | 400 | % |
| Collector Saturation | VCE (sat) IF = 10 | mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O VI-O = | 1.0 kVDC | 1011 | | ||
| Isolation Capacitance | CI-O V = 0 | V, f = 1.0 MHz | 0.5 | pF | ||
| Rise Time*2 | tr VCC = | 10 V, IC = 2 mA, RL = | 100 | 3 | s | |
| Fall Time*2 | tf | 5 |
特性曲线(Typical Performance Curves)

