关键参数速览
- 正向电压 VF
- 1.2
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| Characteristic | 符号 | 额定值 | 单位 | 0.95 | 0.952 |
|---|---|---|---|---|---|
| 1 | 2 | ||||
| Drain-source voltage | VDSS | -20 | V | 2.9±0.2 | |
| Gate-source voltage | VGSS | ± 8 | V | ||
| DC | ID (Note 1) | -6.0 | 80.0+ 50.0- | ||
| Pulse | IDP (Note 1,2) PD (Note 3) t = 10s | -24.0 1 2 | 8.0 1: Gate 2: Source | ||
| Channel temperature | Tch | 150 | °C | 3: Drain | |
| Storage temperature range | Tstg | −55 to 150 | °C | SOT-23F |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| Characteristic | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| V (BR) DSS ID | = -1 mA, VGS = 0 V | -20 | ⎯ | ⎯ | V | |
| V (BR) DSX ID | = -1 mA, VGS = 5 V | (Note 5) -15 | ⎯ | ⎯ | V | |
| Drain cut-off current | IDSS VDS | = -20 V, VGS = 0 V | ⎯ | ⎯ | -1 | μA |
| Gate leakage current | IGSS VGS | = ±8 V, VDS = 0 V | ⎯ | ⎯ | ±1 | μA |
| Gate threshold voltage | Vth VDS | = -3 V, ID = -1 mA | -0.3 | ⎯ | -1.0 | V |
| Forward transfer admittance | ⏐Yfs⏐ VDS | = -3 V, ID = -1.0 A | (Note 4) 4.5 | 9.1 | ⎯ | S |
| ID | = -3.0 A, VGS = -4.5 V | (Note 4) ⎯ | 24.9 | 29.8 | ||
| ID | = -2.5 A, VGS = -2.5 V | (Note 4) ⎯ | 31.1 | 39.7 | ||
| Drain–source ON-resistance | RDS (ON) | mΩ | ||||
| ID | = -1.5 A, VGS = -1.8 V | (Note 4) ⎯ | 38.8 | 56.0 | ||
| ID | = -0.5 A, VGS = -1.5 V | (Note 4) ⎯ | 47.4 | 88.4 | ||
| Input capacitance | Ciss | ⎯ | 840 | ⎯ | ||
| Output capacitance | Coss | ⎯ | 118 | ⎯ | pF | |
| Total gate charge | Qg | ⎯ | 12.8 | ⎯ | ||
| Gate-source charge | Qgs1 | ⎯ | 1.4 | ⎯ | nC | |
| Gate-drain charge | Qgd | ⎯ | 3.0 | ⎯ | ||
| Turn-on time | ton VDD | = -10 V, ID = -2.0 A | ⎯ | 32 | ⎯ | |
| Switching time | ns | |||||
| Turn-off time | toff VGS | = 0 to -2.5 V, RG = 4.7 Ω | ⎯ | 107 | ⎯ | |
| Drain-Source forward voltage | VDSF ID | = 6.0 A, VGS = 0 V | (Note 4) ⎯ | 0.87 | 1.2 | V |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。