关键参数速览
- 正向电压 VF
- 1.2
- 正向电流 IF
- Note5: If a forward bias is
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| Characteristic | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Drain-Source voltage | VDSS | -30 | V |
| Gate-Source voltage | VGSS | ± 12 | V |
| DC | ID (Note 1) | -6.0 | |
| Pulse | IDP (Note 1,2) PD (Note 3) t < 10s | -24.0 1 2 | |
| Channel temperature | Tch | 150 | °C SOT-23F 1: Gate 2: Source |
| Storage temperature range | Tstg | -55 to 150 | °C 3: Drain |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| Characteristic | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| V (BR) DSS ID | = -10 mA, VGS = 0 V | -30 | ― | ― | V | |
| V (BR) DSX ID | = -10 mA, VGS = 8 V | (Note 5) -22 | ― | ― | V | |
| Drain cut-off current | IDSS VDS | = -30 V, VGS = 0 V | ― | ― | -1 | μA |
| Gate leakage current | IGSS VGS | = ±10 V, VDS = 0 V | ― | ― | ±1 | μA |
| Gate threshold voltage | Vth VDS | = -3 V, ID = -1 mA | -0.5 | ― | -1.2 | V |
| Forward transfer admittance | |Yfs| VDS | = -3 V, ID = -2.5 A | (Note 4) 5.7 | 11.3 | ― | S |
| ID | = -5.0 A, VGS = -10 V | (Note 4) ― | 36.0 | 42.0 | ||
| ID | = -4.0 A, VGS = -4.5 V | (Note 4) ― | 42.5 | 50.0 | ||
| Drain–source ON-resistance | RDS (ON) | mΩ | ||||
| ID | = -2.5 A, VGS = -2.5 V | (Note 4) ― | 57.5 | 72.0 | ||
| ID | = -0.5 A, VGS = -1.8 V | (Note 4) ― | 76.5 | 144 | ||
| Input capacitance | Ciss | ― | 560 | ― | ||
| Output capacitance | Coss | ― | 80 | ― | pF | |
| Turn-on time | ton VDD | = -15 V, ID = -2.0 A | ― | 15 | ― | |
| Switching time | ns | |||||
| Turn-off time | toff VGS | = 0 to -4.5 V, RG = 10 Ω | ― | 75 | ― | |
| Total Gate Charge | Qg | ― | 8.2 | ― | ||
| Gate-Source Charge | Qgs1 | ― | 1.1 | ― | nC | |
| Gate-Drain Charge | Qgd | ― | 2.2 | ― | ||
| Drain-Source forward voltage | VDSF ID | = 6.0 A, VGS = 0 V | (Note 4) ― | 0.90 | 1.2 | V |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。