关键参数速览
- 正向电压 VF
- -1.2
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| Characteristic | 符号 | 额定值 | 单位 | 1. | Gate |
|---|---|---|---|---|---|
| Drain–source voltage | VDSS | 60 | V | ||
| Gate–source voltage | VGSS | ± 20 | V | ||
| DC | ID | 200 | SOT23 | ||
| Drain current (Note1) | mA | ||||
| Pulse | IDP (Note 2) | 760 | |||
| PD (Note 3) | 320 | mW | |||
| PD (Note 4) | 1000 | ||||
| Channel temperature | Tch | 150 | °C | ||
| Storage temperature | Tstg | −55 to 150 | °C | ||
| (25.4 mm × 25.4 mm | × 1.6 mm, Cu Pad: | 0.42 mm 2 x 3) | |||
| (25.4 mm × 25.4 mm | × 1.6 mm, Cu Pad: | 645 mm 2 ) | |||
| Marking 3 | Equivalent 3 | Circuit (top view) | |||
| 1 2 | 1 1 | 2 | 2015-01 2015-04-01 |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| Characteristic | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V (BR) DSS ID | = 250 µA, VGS = 0 V | 60 | ― | ― | V |
| VDS | = 60 V, VGS = 0 V | ― | ― | 1 | ||
| Drain cutoff current | IDSS | μA | ||||
| VDS | = 60 V, VGS = 0 V, Tj=150 °C | ― | ― | 200 | ||
| VGS | = ±16 V, VDS = 0 V | ― | ― | ±2 | ||
| Gate leakage current | IGSS VGS | = ±10 V, VDS = 0 V | ― | ― | ±0.5 | μA |
| VGS | = ±5 V, VDS = 0 V | ― | ― | ±0.1 | ||
| Gate threshold voltage | Vth ID | = 250 µA, VDS = VGS | 1.1 | ― | 2.1 | V |
| Forward transfer admittance | |Yfs| VDS | = 10 V, ID = 200 mA (Note | 5) ― | 450 | ― | mS |
| ID | = 100 mA, VGS = 10 V | ― | 2.8 | 3.9 | ||
| RDS (ON) ID | = 100 mA, VGS = 10 V, Tj=150 | °C ― | 5.4 | 8.1 | ||
| (Note 5) ID | = 100 mA, VGS = 5 V | ― | 3.1 | 4.4 | ||
| ID | = 100 mA, VGS = 4.5 V | ― | 3.2 | 4.7 | ||
| Total Gate Charge | Q | ― | 0.27 | 0.35 | ||
| Gate-Source Charge | Q | ― | 0.08 | ― | nC | |
| Gate-Drain Charge | Q | ― | 0.08 | ― | ||
| Input capacitance | Ciss | ― | 11 | 17 | ||
| Output capacitance | Coss VDS | = 10 V, VGS = 0 V, f = 1 MHz | ― | 3 | ― | pF |
| Turn-on delay | time td(on) | ― | 2 | 4 | ||
| Switching Rise time | tr VDD | = 40 V, ID = 160 mA | ― | 3 | ― | |
| time Turn-off delay | time td(off) VGS | = 0 V to 10 V, RG = 50 Ω | ― | 7 | 14 | |
| Fall time | tf | ― | 24 | ― | ||
| Drain-source forward voltage | VDSF ID | = -115 mA, VGS = 0 V (Note 2 | 5) ― | -0.87 | -1.2 2015-04-01 | V |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。