关键参数速览
- 正向电压 VF
- -1.2
产品特点 Features
- (1) Low drain-source on-resistance: R
- (2) Low leakage current: I = 10 µA
- (3) Enhancement mode: V = 2.0 to 4.0 V
- 3. Packaging and Internal Circuit
- TO-220
- = 2.6 mΩ (typ.) (V = 10 V)
- (V = 80 V)
- = 10 V, I = 1.0 mA)
- 1: Gate
- 2: Drain (heatsink)
- 3: Source
- = 25 unless otherwise specified)
- TK100E08N1
- 5. Thermal Characteristics
- Characteristics Symbol Max Unit
- Channel-to-case thermal resistance R 0.49 /W th(ch-c)
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 额定值 | 单位 |
|---|---|---|
| V V | 80 ±20 | V |
| limit) (Note 1,2) I | 214 | A |
| (Note 1,3) I | 100 | |
| ms) (Note 1) I | 568 | |
| P | 255 | W |
| (Note 4) E | 278 | mJ |
| I | 100 | A |
| T T | 150 -55 to 150 | |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±20 V, V = 0 V | | | ±0.1 | µA |
| Drain cut-off current | I V | = 80 V, V = 0 V | | | 10 | |
| Drain-source breakdown voltage | V I | = 10 mA, V = 0 V | 80 | | | V |
| Drain-source breakdown voltage | (Note 5) V I | = 10 mA, V = -20 V | 60 | | | |
| Gate threshold voltage | V V | = 10 V, I = 1.0 mA | 2.0 | | 4.0 | |
| Drain-source on-resistance | R V | = 10 V, I = 50 A | | 2.6 | 3.2 | mΩ |
| Input capacitance | C V = | 40 V, V = 0 V, f = 1 MHz | | 9000 | | pF |
| Output capacitance | C | | 2100 | | ||
| Gate resistance | r | | | 3.2 | | Ω |
| Switching time (rise time) | t See | Figure 6.2.1 | | 26 | | ns |
| Switching time (turn-on time) | t | | 53 | | ||
| Switching time (fall time) | t | | 46 | | ||
| Switching time (turn-off time) | t | | 140 | TK100E08N1 | ||
| Diode forward voltage | V I 4 | = 100 A, V = 0 V | | | -1.2 | V 2012-01-10 |