Name: TOSHIBA TK10A60D(STA4,X,M)
Brand: TOSHIBA
Availability: InStock

产品实拍图

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引脚定义与内部结构

数据来源：原厂规格书引脚图

超过下表数值可能造成器件永久损坏，设计时请留余量。

特性	符号	额定值	单位
Drain-source voltage	VDSS	600	V
Drain-gate voltage (RGS = 20 kΩ)	VDGR	600	V 1: Gate 2: Drain
Gate-source voltage	VGSS	±30	V 3: Source
DC (Note	1) ID	10
Pulse (t = 1	ms) IDP	40
(Note	1)		JEDEC ―
Drain power dissipation (Tc = 25°C)	PD	45	W
(Note	EAS 2)	363	mJ TOSHIBA 2-10U1B
Repetitive avalanche energy (Note	3) EAR	4.5	mJ
Channel temperature	Tch	150	°C
Storage temperature range	Tstg	-55 to 150	°C
Thermal Characteristics			2
Thermal resistance, channel to	case Rth (ch-c)	2.78	°C/W
Thermal resistance, channel to	ambient Rth (ch-a)	62.5 1	°C/W 1 2009-09-29

数据来源：原厂规格书

特性	符号	测试条件	最小	典型	最大	单位
Gate leakage current	IGSS VGS	= ±30 V, VDS = 0 V	⎯	⎯	±1	μA
Drain cut-off current	IDSS VDS	= 600 V, VGS = 0 V	⎯	⎯	10	μA
Drain-source breakdown voltage	V (BR) DSS ID	= 10 mA, VGS = 0 V	600	⎯	⎯	V
Gate threshold voltage	Vth VDS	= 10 V, ID = 1 mA	2.0	⎯	4.0	V
Drain-source ON-resistance	RDS (ON) VGS	= 10 V, ID = 5 A	⎯	0.62	0.75	Ω
Forward transfer admittance	⎪Yfs⎪ VDS	= 10 V, ID = 5 A	1.5	6.0	⎯	S
Input capacitance	Ciss		⎯	1350	⎯
Output capacitance	Coss		⎯	135	⎯
		10 V ID = 5 A	VOUT
Rise time	tr		⎯	22	⎯
Turn-on time	ton	RL	= ⎯	55	⎯
Switching time		40	Ω			ns
Fall time	tf	VDD ∼−	⎯ 200 V	15	⎯
Turn-off time	toff	Duty ≤ 1%, tw = 10 μs	⎯	100	⎯
Total gate charge	Qg		⎯	25	⎯
Gate-source charge	Qgs VDD	∼− 400 V, VGS = 10 V, ID = 10	A ⎯	16	⎯	nC
Gate-drain charge	Qgd		⎯	9	⎯
Forward voltage (diode)	VDSF	IDR = 10 A, VGS = 0 V	⎯	⎯	−1.7	V
		[[G]]/RoHS COMPATIBLE	or [[G]]/RoHS	[[Pb]]
		environmental matters such as 2	the RoHS	compatibility	of	Product. 2009-09-29

TK10A60DID – VDSCOMMON SOURCE 6.5Tc = 25°C)A( PULSE TEST8 10,8TNERRUC 6 6NIARDVGS = 4.5V0 2 4 6 8 10DRAIN-SOURCE VOLTAGE VDS (V)ID – VGS

图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。