产品特点 Features
- (1) Low drain-source on-resistance: R
- (2) High forward transfer admittance: |Y
- (3) Low leakage current: I = 10 µA
- (4) Enhancement mode: V = 2.0 to 4.0 V
- 3. Packaging and Internal Circuit
- TO-220SIS
- = 0.54 Ω (typ.)
- = 7.5 S (typ.)
- (V = 650 V)
- = 10 V, I = 1 mA)
- 1: Gate (G)
- 2: Drain (D)
- 3: Source (S)
- = 25 unless otherwise specified)
- TK11A65D
- 5. Thermal Characteristics
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 额定值 | 单位 |
|---|---|---|
| V V | 650 ±30 | V |
| (Note 1) I (Note 1) I | 11 44 | A |
| P | 45 | W |
| (Note 2) E | 506 | mJ |
| I | 11 | A |
| (Note 3) E | 4.5 | mJ |
| T T | 150 -55 to 150 | |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±30 V, V = 0 V | | | ±1 | µA |
| Drain cut-off current | I V | = 650 V, V = 0 V | | | 10 | |
| Drain-source breakdown voltage | V I = | 10 mA, V = 0 V | 650 | | | V |
| Gate threshold voltage | V V | = 10 V, I = 1 mA | 2.0 | | 4.0 | |
| Drain-source on-resistance | R V | = 10 V, I = 5.5 A | | 0.54 | 0.70 | Ω |
| Forward transfer admittance | |Y | V | = 10 V, I = 5.5 A | 1.9 | 7.5 | | S |
| Input capacitance | C V | = 25 V, V = 0 V, f = 1 MHz | | 1700 | | pF |
| Output capacitance | C | | 157 | | ||
| Switching time (rise time) | t See | Figure 6.2.1. | | 30 | | ns |
| Switching time (turn-on time) | t | | 80 | | ||
| Switching time (fall time) | t | | 18 | | ||
| Switching time (turn-off time) | t | | 135 | |