Name: TOSHIBA TK15A60D(STA4,X,M)
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

特性	符号	额定值	单位	2.54	2.542
				Φ0.2 M A
Drain-source voltage	VDSS	600	V	51.0 1	2 3 ±
Gate-source voltage	VGSS	±30	V	46.0	5.4 ±
DC (Note	1) ID	15		1: Gate 2: Drain
Pulse (Note	1) IDP	60		3:	Source
Drain power dissipation (Tc = 25°C)	PD	50	W
Single pulse avalanche energy				JEDEC	⎯
	EAS	527	mJ
Avalanche current	IAR	15	A
Repetitive avalanche energy (Note	3) EAR	5.0	mJ
Channel temperature	Tch	150	°C
Storage temperature range	Tstg	−55 to 150	°C
Thermal resistance, channel to	case Rth (ch-c)	2.5	°C/W
Thermal resistance, channel to	ambient Rth (ch-a)	62.5 1	°C/W		2010-08-12

数据来源：原厂规格书

特性	符号	测试条件	最小	典型	最大	单位
Gate leakage current	IGSS VGS	= ±30 V, VDS = 0 V	⎯	⎯	±1	μA
Drain cut-off current	IDSS VDS	= 600 V, VGS = 0 V	⎯	⎯	10	μA
Drain-source breakdown voltage	V (BR) DSS ID	= 10 mA, VGS = 0 V	600	⎯	⎯	V
Gate threshold voltage	Vth VDS	= 10 V, ID = 1 mA	2.0	⎯	4.0	V
Drain-source ON resistance	RDS (ON) VGS	= 10 V, ID = 7.5 A	⎯	0.31	0.37	Ω
Forward transfer admittance	\|Yfs\| VDS	= 10 V, ID = 7.5 A	2.4	8.5	⎯	S
Input capacitance	Ciss		⎯	2600	⎯
Output capacitance	Coss		⎯	280	⎯
Rise time	tr	10 V ID = 7.5 A VOUT	⎯	50	⎯
Turn-on time	ton	RL =	⎯ 26 Ω	100	⎯
Switching time						ns
Fall time	tf	VDD ≈ 200	⎯ V	25	⎯
Turn-off time	toff		⎯	150	⎯
Total gate charge	Qg		⎯	45	⎯
Gate-source charge	Qgs VDD	≈ 400 V, VGS = 10 V, ID = 15	A ⎯	28	⎯	nC
Gate-drain charge	Qgd		⎯	17	⎯
	IDR	⎯	⎯	⎯	15	A
Forward voltage (diode)	VDSF	IDR = 15 A, VGS = 0 V	⎯	⎯	−1.7	V
		[[G]]/RoHS COMPATIBLE	or [[G]]/RoHS	[[Pb]]
	Please	contact your TOSHIBA sales	representative	for	details as	to

Unit: mm2.7 ± 0.2Φ3.2 ± 0.2 10 ± 0.3 A9.3 3.01.14 ± 0.15TK15A60DID – VDSCOMMON SOURCE 10 8 7.25Tc = 25°C)A( PULSE TESTTNERRUC 12 6.75NIARD

图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。