产品特点 Features
- (2) Low drain-source on-resistance: R by used to Super Junction Structure :
- (3) Easy to control Gate switching
- (4) Enhancement mode: V = 3 to 4.5 V (V
- 3. Packaging and Internal Circuit
- TO-247
- (typ.)
- = 0.036 Ω (typ.)
- = 10 V, I = 3.1 mA)
- 1: Gate
- 2: Drain (Heatsink)
- 3: Source
- = 25 unless otherwise specified)
- TK62N60W5
- 5. Thermal Characteristics
- Characteristics Symbol Max Unit
- Channel-to-case thermal resistance R 0.313 /W th(ch-c)
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 额定值 | 单位 |
|---|---|---|
| V V | 600 ±30 | V |
| (Note 1) I | 61.8 | A |
| (Note 1) I | 247 | |
| P | 400 | W |
| (Note 2) E | 698 | mJ |
| I | 15.5 | A |
| (Note 1) I | 61.8 | |
| (Note 1) I | 247 | |
| T T | 150 -55 to 150 | |
| TOR | 0.8 | Nm |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±30 V, V = 0 V | | | ±1 | µA |
| Drain cut-off current | I V | = 600 V, V = 0 V | | | 100 | |
| Drain-source breakdown voltage | V I = | 10 mA, V = 0 V | 600 | | | V |
| Gate threshold voltage | V V | = 10 V, I = 3.1 mA | 3 | | 4.5 | |
| Drain-source on-resistance | R V | = 10 V, I = 30.9 A | | 0.036 | 0.045 | Ω |
| Input capacitance | C V | = 300 V, V = 0 V, f = 100 | kHz | 6500 | | pF |
| Output capacitance | C | | 140 | | ||
| Effective output capacitance | C V | = 0 to 400 V, V = 0 V | | 200 | | |
| Gate resistance | r V | = OPEN, f = 1 MHz | | 2 | | Ω |
| Switching time (rise time) | t See | Figure 6.2.1 | | 190 | | ns |
| Switching time (turn-on time) | t | | 270 | | ||
| Switching time (fall time) | t | | 13 | | ||
| Switching time (turn-off time) | t | | 250 | | ||
| MOSFET dv/dt ruggedness | dv/dt V | = 0 to 400 V, I = 15.5 A | 50 | | | V/ns |
| Duty ≤ 1 %, t = 10 | µs |