Name: TOSHIBA TK72E12N1,S1X(S
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

特性	符号	额定值	单位
Drain-source voltage	V	120	V
Gate-source voltage	V	±20
Drain current (DC) (Silicon limit)	(Note 1), (Note 2) I	179	A
Drain current (DC)	(Note 1), (Note 3) I	72
Drain current (pulsed) (t = 1 ms)	(Note 1) I	360
Power dissipation (T = 25)	P	255	W
Single-pulse avalanche energy	(Note 4) E	256	mJ
Avalanche current	I	72	A
Channel temperature	T	150	
Storage temperature	T	-55 to 150
Channel-to-case thermal resistance		R 0.49	/W
Channel-to-ambient thermal resistance	2	R 83.3	2012-08-09

数据来源：原厂规格书

特性	符号	测试条件	最小	典型	最大	单位
Gate leakage current	I V	= ±20 V, V = 0 V			±0.1	µA
Drain cut-off current	I V	= 120 V, V = 0 V			10
Drain-source breakdown voltage	V I	= 10 mA, V = 0 V	120			V
Drain-source breakdown voltage	(Note 5) V I	= 10 mA, V = -20 V	90		
Gate threshold voltage	V V	= 10 V, I = 1.0 mA	2.0		4.0
Drain-source on-resistance	R V	= 10 V, I = 36 A		3.6	4.4	mΩ
Input capacitance	C V =	60 V, V = 0 V, f = 1 MHz		8100		pF
Output capacitance	C			1200	
Gate resistance	r			2.4		Ω
Switching time (rise time)	t See	Figure 6.2.1		33		ns
Switching time (turn-on time)	t			64	
Switching time (fall time)	t			37	
Switching time (turn-off time)	t			120	 TK72E12N1
Diode forward voltage	V I 4	= 72 A, V = 0 V			-1.2	V 2012-08-09

Switching Voltage RegulatorsTK72E12N1DSF DR GS rr DR GS-dI /dt = 100 A/µsDS DSS7. MarkingFig. 7.1 Marking4 2012-08-09

规格书为原厂公开资料，点击在新窗口打开下载。

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