产品特点 Features
- (1) Low drain-source on-resistance: R = 1.0 Ω (typ.)
- DS(ON)
- (2) Low leakage current : I = 10 µA (max) (V = 720 V)
- DSS DS
- (3) Enhancement mode: V = 2.5 to 4.0 V (V = 10 V, I = 0.9 mA) th DS D
- 3. Packaging and Internal Circuit
- 1: Gate
- 2: Drain (Heatsink)
- 3: Source
- TO-3P(N)
- Start of commercial production
- 2013-08
- 1 2014-02-28
- TK9J90E
- 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) aaaa
- Characteristics Symbol Rating Unit
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±30 V, V = 0 V | | | ±1 | µA |
| Drain cut-off current | I V | = 720 V, V = 0 V | | | 10 | |
| Drain-source breakdown voltage | V I | = 10 mA, V = 0 V | 900 | | | V |
| Gate threshold voltage | V V | = 10 V, I = 0.9 mA | 2.5 | | 4.0 | |
| Drain-source on-resistance | R V | = 10 V, I = 4.5 A | | 1.0 | 1.3 | Ω |
| Input capacitance | C V = | 25 V, V = 0 V, f = 1 MHz | | 2000 | | pF |
| Output capacitance | C | | 150 | | ||
| Gate resistance | r V = | OPEN, f = 1 MHz | | 3.5 | | Ω |
| Switching time (rise time) | t See | Fig. 6.2.1. | | 40 | | ns |
| Switching time (turn-on time) | t | | 80 | | ||
| Switching time (fall time) | t | | 35 | | ||
| Switching time (turn-off time) | t | | 140 | | ||
| MOSFET dv/dt ruggedness | dv/dt V = | 0 to 400 V, I = 9 A | 20 | | | V/ns |