产品特点 Features
- (1) High-speed switching
- (2) Small gate charge: Q = 26 nC (typ.)
- (3) Low drain-source on-resistance: R = 1.9 mΩ (typ.) (V = 10 V)
- DS(ON) GS
- (4) Low leakage current: I = 10 µA (max) (V = 60 V)
- DSS DS
- (5) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D
- 3. Packaging and Internal Circuit
- 1, 2, 3: Source
- 4: Gate
- 5, 6, 7, 8: Drain
- SOP Advance
- SOP Advance(N)
- The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative.
- Start of commercial production
- 2012-11
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Drain-source voltage | V | 60 | V |
| Gate-source voltage | V | ±20 | |
| Drain current (DC) (Silicon limit) | (Note 1), (Note 2) I | 130 | A |
| Drain current (DC) (T = 25) | (Note 1) I | 60 | |
| Drain current (pulsed) (t = 1 ms) | (Note 1) I | 200 | |
| Power dissipation (T = 25) | P | 78 | W |
| Power dissipation (t = 10 s) | (Note 3) P | 2.8 | W |
| Power dissipation (t = 10 s) | (Note 4) P | 1.6 | W |
| Single-pulse avalanche energy | (Note 5) E | 453 | mJ |
| Avalanche current | I | 60 | A |
| Channel temperature | T | 150 | |
| Storage temperature | T | -55 to 150 | |
| Channel-to-case thermal resistance (T | = 25) c | R 1.60 th(ch-c) | /W |
| Channel-to-ambient thermal resistance | (t = 10 s) (Note 3) | R 44.6 | /W |
| Channel-to-ambient thermal resistance | (t = 10 s) (Note 4) | R 78.1 | /W |
| BBBBooooaaaarrrrdddd ((((aaaa)))) | BBBBooooaaaarrrrdddd | ((((bbbb)))) |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±20 V, V = 0 V | | | ±0.1 | µA |
| Drain cut-off current | I V | = 60 V, V = 0 V | | | 10 | |
| Drain-source breakdown voltage | V I = | 10 mA, V = 0 V | 60 | | | V |
| V I = | 10 mA, V = -20 V | 45 | | | ||
| Gate threshold voltage | V V | = 10 V, I = 1.0 mA | 2.0 | | 4.0 | |
| Drain-source on-resistance | R V | = 6.5 V, I = 15 A | | 2.6 | 4.7 | mΩ |
| V | = 10 V, I = 30 A | | 1.9 | 2.3 | ||
| Input capacitance | C V | = 30 V, V = 0 V, f = 1 MHz | | 4700 | 6100 | pF |
| Output capacitance | C | | 1500 | | ||
| Gate resistance | r | | 1.0 | 1.5 | Ω | |
| Switching time (rise time) | t See | Figure 6.2.1. | | 9.9 | | ns |
| Switching time (turn-on time) | t | | 29 | | ||
| Switching time (fall time) | t | | 16 | | ||
| Switching time (turn-off time) | t | | 50 | |