产品应用与封装尺寸
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(T1)-H-package.jpg)
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.4
- 电流传输比 CTR
- 260
- 集电极-发射极电压 VCEO
- 35
- 隔离电压 VISO
- 5x1010
产品特点 Features
- The CT817 series consists of a photo transistor
- •••• High isolation 5000 VRMS optically coupled to a gallium arsenide
- Temperature Min. (Tsmin) 150°C
- Temperature Max. (Tsmax) 200°C
- Time (ts) from (Tsmin to Tsmax) 60-120 seconds
- Ramp-up Rate (t to t ) 3°C/second max.
- Liquidous Temperature (T ) 217°C
- Time (t ) Maintained Above (T ) 60 – 150 seconds
- Peak Body Package Temperature 260°C +0°C / -5°C
- Time (t ) within 5°C of 260°C 30 seconds
- Ramp-down Rate (T to T ) 6°C/second max
- Time 25°C to Peak Temperature 8 minutes max.
- DC Input
- CT817 Series
- Phototransistor Optocoupler
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 | 备注 |
|---|---|---|---|---|---|---|---|
| CT817 | Series | ||||||
| DC Input 4-Pin | Phototransistor | Optocoupler |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 额定值 | 单位 | 备注 |
|---|---|---|---|---|
| P Total power | dissipation | 200 | mW | |
| TOPR Operating | temperature | -55 ~ +110 | oC | |
| TSTG Storage | temperature | -55 ~ +150 | oC | |
| TSOL Soldering | temperature | 260 | oC | |
| I Forward current | 60 | mA | ||
| I Peak transient | current (≤1µs P.W,300pps) | 1 | A | |
| P Emitter power | dissipation | 100 | mW | |
| P Detector power | dissipation | 150 | mW | |
| B Collector-Emitter | Breakdown Voltage | 35 | V | |
| B Emitter-Collector | Breakdown Voltage | 6 | V | |
| I Collector | Current | 50 | mA |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 | 备注 |
|---|---|---|---|---|---|---|---|
| V Forward | voltage | I =10mA | - | 1.24 | 1.4 | V | |
| C Input | Capacitance | f= 1MHz | - | 10 | 30 | pF | |
| B | Collector-Emitter Breakdown | I = 100µA | 35 | - | - | V | |
| B | Emitter-Collector Breakdown | I = 100µA | 6 | - | - | V | |
| I | Collector-Emitter Dark Current | V = 20V, I =0mA | - | - | 100 | nA | |
| CT817 | 50 | - | 600 | ||||
| CT817A | 80 | - | 160 | ||||
| CTR Current | Transfer Ratio CT817B | I = 5mA, V = 5V | 130 | - | 260 | % | |
| CT817C | 200 | - | 400 | ||||
| CT817D | 300 | - | 600 | ||||
| V | I = 20mA, I = 1mA | - | 0.1 | 0.2 | V | ||
| R Isolation | Resistance | V = 500V | 5x1010 | - | - | Ω | |
| C Isolation | Capacitance | f= 1MHz | - | 0.25 | 1 | pF |