产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.4
- 正向电流 IF
- 30
- 集电极-发射极电压 VCEO
- 0.4
- 工作温度 TA
- −25 to +85
产品特点 Features
- 1. Transmissive with phototransistor output
- 2. Highlights :
- Compact Size
- Low Profi le
- Narrow Gap
- Through-hole : GP1S196HCZ0F
- SMT : GP1S196HCZSF
- 3. Key Parameters :
- Gap Width : 1.1mm
- Slit Width (detector side): 0.3mm
- Package : 3.1×2×2.7mm
- 4. Lead free and RoHS directive compliant
- Notice The content of data sheet is subject to change without prior notice.
- Sheet No.: D3-A01001EN
- 1 Date Jun. 30. 2005
- GP1S196HCZ0F/GP1S196HCZSF
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| (T =25˚C ) | |||
| Forward current | I | 30 | mA |
| Power dissipation | P | 75 | mW |
| Collector-emitter voltage | V | 35 | V |
| Emitter-collector voltage | V | 6 | V |
| Collector current | I | 20 | mA |
| Collector power dissipation | P | 75 | mW |
| Total power dissipation | P | 100 | mW 0.3mm or more |
| Operating temperature | T | −25 to +85 | ˚C |
| Storage temperature | T | −40 to +100 | ˚C Soldering area |
| ∗1Soldering temperature | T | 260 | ˚C |
| (GP1S196HCZ0F) | |||
| ∗1 For 3s or less |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| (T | =25˚C ) | |||||
| Forward voltage | V | I =20mA | − | 1.2 | 1.4 | V |
| Output Collector dark current | I | V =20V | − | − | 100 | nA |
| Collector current | I | V =5V, I =5mA | 100 | − | 400 | μA |
| Collector-emitter saturation | voltage V | I =10mA, I =40μA | − | − | 0.4 | V |
| Rise | time t | − | 50 | 150 | ||
| teristics Response time | V | =5V, I =100μA, R =1kΩ | μs | |||
| Fall | time t | − | 50 | 150 | ||
| Sheet No.: | D3-A01001EN |