产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 5 | EMITTER | |
| 6 | COLLECTOR | |
| 7 | BASE | |
| 8 | N/C |
数据来源：原厂规格书引脚图
关键参数速览
- 电流传输比 CTR
- 20
- 正向电流 IF
- 0.4
- 集电极-发射极电压 VCEO
- 7
- 工作温度 TA
- -40 to +100
产品特点 Features
- Closely Matched Current Transfer Ratios These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon
- Minimum BV of 70 V Guaranteed
- CEO phototransistor detector, in a surface mountable, small Single-Channel
- MOC205M, MOC206M, MOC207M outline, plastic package. They are ideally suited for
- Minimum BV of 30 V Guaranteed
- MOC20xM,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 额定值 | 值 | 单位 |
|---|---|---|---|
| T Storage | Temperature | -40 to +125 | °C |
| T Ambient | Operating Temperature | -40 to +100 | °C 8-pin |
| T Junction | Temperature | -40 to +125 | °C |
| T Lead Solder | Temperature | 260 for 10 seconds | °C |
| Total Device | Power Dissipation @ T = 25°C | 240 | mW |
| Derate above | 25°C | 2.94 | mW/°C |
| I Continuous | Forward Current | 60 | mA |
| I (pk) Forward | Current – Peak (PW = 100 µs, 120 pps) | 1.0 | A |
| LED Power | Dissipation @ T = 25°C | 90 | mW |
| Derate above | 25°C | 0.8 | mW/°C |
| I Continuous | Collector Current | 150 | mA |
| V Collector-Emitter | Voltage | 30 | V |
| V Emitter-Collector | Voltage | 7 | V |
| Detector | Power Dissipation @ T = 25°C | 150 | mW |
| Derate above | 25°C | 1.76 | mW/°C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| MOC20xM, | |||
| Installation Classifications | per DIN VDE < 150 V RMS | I–IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage < 300 V | I–III | |
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | — |
| Comparative Tracking Index | 175 | 8-pin | |
| Input-to-Output | Test Voltage, Method A, V x 1.6 = V | , | |
| IORM | PR 904 | V | |
| Type and | Sample Test with t = 10 s, Partial Discharge < | 5 pC | peak Single-Channel |
| Input-to-Output | Test Voltage, Method B, V x 1.875 = | V , | |
| IORM | PR 1060 | V | |
| 100% Production | Test with t = 1 s, Partial Discharge < 5 | pC | peak |
| V Highest Allowable | Over-Voltage | 4000 | V |
| External | Creepage | ≥ 4 | mm |
| External | Clearance | ≥ 4 | mm |
| T Case Temperature(1) | 150 | °C | |
| I Input Current(1) | 200 | mA | |
| P Output Power(1) | 300 | mW | |
| R Insulation | Resistance at T , V = 500 V(1) | > 109 | Ω MOC20xM, |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| MOC21xM | ||||||
| MOC216M, MOC217M | I = 1 mA | 1.07 | 1.3 | V | ||
| I = 10 mA | 1.15 | 1.5 | V | |||
| MOC211M, MOC212M, MOC213M | F | — | ||||
| C Input | Capacitance | 18 | pF | |||
| I | V = 10 V, T = 25°C | 1.0 | 50 | nA | ||
| I | V = 10 V, T = 100°C | 1.0 | µA | |||
| CEO2 | CE A | Single-Channel | ||||
| MOC205M, MOC206M, MOC207M | I = 100 µA | 70 | 100 | V | ||
| I = 100 µA | 30 | 100 | V | |||
| BV | Collector-Base Breakdown Voltage | I = 10 µA | 70 | 120 | V | |
| BV | Emitter-Collector Breakdown Voltage | I = 100 µA | 7 | 10 | V | |
| C | Collector-Emitter Capacitance | f = 1.0 MHz, V = 0 | 7 | pF | ||
| MOC205M | I = 10 mA, V = 10 V | 40 | 80 | % | ||
| MOC206M | I = 10 mA, V = 10 V | 63 | 125 | % | ||
| MOC207M | I = 10 mA, V = 10 V | 100 | 200 | % | ||
| CTR | MOC211M | I = 10 mA, V = 10 V | 20 | % | ||
| MOC212M | I = 10 mA, V = 10 V | 50 | % | |||
| MOC213M | I = 10 mA, V = 10 V | 100 | % | |||
| MOC216M | I = 1 mA, V = 5 V | 50 | % | |||
| MOC217M | I = 1 mA, V = 5 V | 100 | % | |||
| V CE(SAT) | MOC211M, MOC212M, MOC213M | I C = 2 mA, I F = 10 mA | 0.4 | V | ||
| MOC216M, MOC217M | I = 100 µA, I = 1 mA | 0.4 | V | |||
| t Turn-On | Time | C CC | 7.5 | µs | ||
| t Turn-Off | Time | C CC | 5.7 | µs | ||
| t Rise | Time | C CC | 3.2 | µs | ||
| t Fall | Time | C CC | 4.7 | µs MOC20xM, |
特性曲线（Typical Performance Curves）
相关 / 可替代型号
以上型号来自规格书与型号命名比对，参数需以各自规格书为准；下单前请与销售确认封装与脚位。