博科信光耦 BOKEXIN 博科信光耦BOKEXIN OPTOCOUPLER
首页 › 产品目录 › MOC3052VM

MOC3052VM 可控硅输出光耦

• Excellent I Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs Degradation infrared emitting diode optically coupled to a non-zero- • 600 V Peak Blocking Voltage crossin
正向电压 VF 1.50正向电流 IF 60工作温度 TA -40 to +85

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符,本页不放同系列近似图;如需实物照片,请联系销售获取本批次实拍。

产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚符号名称
3V
4MAIN
5NC
6MAIN
数据来源:原厂规格书引脚图

关键参数速览

正向电压 VF
1.50
正向电流 IF
60
工作温度 TA
-40 to +85

产品特点 Features

  • 6-Pin
  • Excellent I Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs
  • Degradation infrared emitting diode optically coupled to a non-zero-
  • 600 V Peak Blocking Voltage crossing silicon bilateral AC switch (triac). These devices DIP isolate low voltage logic from 115 V and 240 V lines
  • DIN EN/IEC60747-5-5
  • MOC3051M,

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号参数值单位
MOC3052M
T StorageTemperature-40 to +150°C
T OperatingTemperature-40 to +85°C
T JunctionTemperature Range-40 to +100°C
T Lead SolderTemperature260 for 10 seconds°C 6-Pin
Total DevicePower Dissipation at 25°C Ambient330mW
Derate Above25°C4.4mW/°C DIP
I ContinuousForward Current60mA
Total PowerDissipation at 25°C Ambient100mW
Derate Above25°C1.33mW/°C
V Off-State OutputTerminal Voltage600V
I Peak Non-RepetitiveSurge Current (Single Cycle 60 Hz SineWave) 1A
Total PowerDissipation at 25°C Ambient300mW
Derate Above25°C4mW/°C (600
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

符号参数值单位
MOC3052M
Installation Classificationsper DIN VDE < 150 V RMSI–IV
0110/1.89 Table 1, For RatedMains Voltage < 300 VI–IV
Pollution Degree (DIN VDE0110/1.89)2
Comparative Tracking Index175— 6-Pin
Input-to-OutputTest Voltage, Method A, V x 1.6 = V,
IORMPR 1360V
Type andSample Test with t = 10 s, Partial Discharge <5 pCpeak
mRandom-Phase
Input-to-OutputTest Voltage, Method B, V x 1.875 =V ,
IORMPR 1594V
100% ProductionTest with t = 1 s, Partial Discharge < 5pCpeak
V Highest AllowableOver-Voltage6000V
ExternalCreepage≥ 7mm
ExternalClearance≥ 7mm
ExternalClearance (for Option TV, 0.4" Lead Spacing)≥ 10mm
R InsulationResistance at T , V = 500 V> 109Ω Driver (600 MOC3051M,

电气特性 Electrical Characteristics(TA = 25°C)

符号参数测试条件最小典型最大单位
MOC3052M
V InputForward VoltageI = 10 mA1.181.50V
I PeakBlocking Current, EitherDirection V = 600 V, I = 0(1)10100nA 6-Pin
V PeakOn-State Voltage, EitherDirection I = 100 mA peak, I =01.72.5V
dv/dt CriticalRate of Rise of Off-StateVoltage I = 0 (Figure 13, at 400V)1000V/µs
LEDTrigger Current, MainTerminal MOC3051M15
FT EitherDirection Voltage= 3 V(2) MOC3052M10
IAll220µA

特性曲线(Typical Performance Curves)

相关 / 可替代型号

以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。

应用领域 Applications

Solenoid/Valve ControlsLamp BallastsStatic AC Power SwitchTriacAC ACPeripheralsSolid State RelayDriverIncandescent Lamp DimmersTemperature ControlsMotor ControlsRandom-Phase

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

获取报价 / 申请样品

常备现货、免费送样、支持小批量试产。报出用量与封装要求,当天给报价与交期。

咨询此型号 · 现货询价

型号:MOC3052VM 请报型号与数量
销售电话(点击直接拨号)
📞 0755-82811939点击拨号📞 0755-82812373点击拨号📞 0755-82811915点击拨号📞 0755-82811193点击拨号
企业 QQ(点击发起会话)
💬 QQ 2850611261点击会话💬 QQ 2355817597点击会话💬 QQ 3002728093点击会话💬 QQ 2355817598点击会话
营业时间:周一至周六 9:30 — 18:00
深圳市福田区华强北飞亚达大厦西座五楼501
产品图片放大预览
1 / 1
滚轮缩放 · 拖动平移 · 点击图片放大 2 倍 · ← → 切换 · Esc 关闭